Infineon SPW17N80C3FKSA1: 800V, 17A N-Channel Power MOSFET for High-Efficiency Switching Applications

In the realm of power electronics, achieving high efficiency and reliability in switching applications is paramount. The Infineon SPW17N80C3FKSA1 stands out as a high-performance N-Channel Power MOSFET engineered to meet these demanding requirements. This device is designed to handle high voltage and current levels while minimizing losses, making it an ideal choice for a wide range of industrial and commercial applications.

At the heart of this MOSFET is its 800V drain-source voltage rating, which provides a robust safety margin for operations in off-line switch-mode power supplies (SMPS), power factor correction (PFC) stages, motor drives, and inverters. This high voltage capability ensures durability and longevity, even in environments with significant voltage spikes or transients. Complementing this is a continuous drain current rating of 17A, allowing it to manage substantial power levels effectively.

One of the most critical features of the SPW17N80C3FKSA1 is its exceptionally low on-state resistance (RDS(on)) of just 0.19Ω. This low resistance is key to reducing conduction losses, which directly translates to higher efficiency and lower heat generation. As a result, systems can operate cooler, improving reliability and potentially reducing the need for extensive cooling mechanisms.

The MOSFET is built using Infineon’s advanced CoolMOS™ C3 superjunction technology. This technology strikes an optimal balance between low switching losses and high switching speed, which is crucial for high-frequency operations. The fast switching performance enables designers to increase the switching frequency of their circuits, leading to smaller passive components like inductors and transformers, and ultimately, more compact and cost-effective power solutions.

Additionally, the device offers enhanced avalanche ruggedness and excellent body diode characteristics, ensuring safe operation under inductive load conditions and during hard commutation events. The TO-247 package provides superior thermal performance, facilitating efficient heat dissipation and allowing for higher power density designs.

ICGOOODFIND: The Infineon SPW17N80C3FKSA1 is a high-voltage, high-current MOSFET that delivers outstanding efficiency, reliability, and thermal performance, making it a superior choice for advanced power switching applications.

Keywords:

High Voltage

Low RDS(on)

CoolMOS Technology

Fast Switching

High Efficiency