Infineon BSC054N04NSG: 40V N-Channel OptiMOS™ Power MOSFET for High-Efficiency Applications

The demand for higher power efficiency and thermal performance in modern electronic systems continues to drive innovation in semiconductor technology. Addressing these needs, the Infineon BSC054N04NSG stands out as a high-performance 40V N-Channel MOSFET utilizing Infineon’s advanced OptiMOS™ technology. This device is engineered to deliver superior efficiency, reliability, and power density in a wide range of applications.

A key feature of the BSC054N04NSG is its extremely low on-state resistance (RDS(on)) of just 0.54 mΩ (max). This ultra-low resistance significantly reduces conduction losses, making the MOSFET ideal for high-current switching operations. Whether used in synchronous rectification, motor control, or DC-DC converters, this attribute ensures that more energy is transferred to the load with minimal heat generation.

The component is also characterized by its high current handling capability, supporting up to 180 A continuous current. This robust performance, combined with a 40V drain-source voltage rating, makes it suitable for demanding environments such as industrial power systems, automotive applications, and server power supplies.

Another advantage is its optimized switching performance. The low gate charge (Qg) and output capacitance (Coss) of the BSC054N04NSG allow for faster switching frequencies, which helps in designing smaller, more efficient power converters. This is particularly beneficial in space-constrained applications where high frequency and high efficiency are critical.

Thermal management is further enhanced thanks to the MOSFET’s low thermal resistance and compatibility with modern PCB layout techniques. The device is offered in a SuperSO8 package that offers improved heat dissipation and power cycling capability.

In summary, the Infineon BSC054N04NSG provides a compelling combination of low RDS(on), high current capacity, and excellent dynamic characteristics—making it a top choice for designers aiming to push the limits of power efficiency and system miniaturization.

ICGOOODFIND:

The Infineon BSC054N04NSG exemplifies state-of-the-art power MOSFET design, offering engineers a reliable and high-efficiency solution for next-generation power management systems.

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Keywords:

OptiMOS™ Technology, Low RDS(on), High Current Capability, Power Efficiency, Thermal Performance