Infineon BSG0811NDATMA1: High-Performance 80V OptiMOS Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its OptiMOS™ power MOSFET family. The Infineon BSG0811NDATMA1 stands as a prime example, an 80V N-channel MOSFET engineered to set new benchmarks in advanced switching applications.

This device is specifically designed to address the demanding requirements of modern switch-mode power supplies (SMPS), motor drives, and DC-DC converters. Its core strength lies in its exceptionally low figure-of-merit (FOM), achieved by optimizing the trade-off between on-state resistance (R DS(on)) and gate charge (Q G). The BSG0811NDATMA1 boasts a maximum R DS(on) of just 1.8 mΩ at 10 V V GS, which is remarkably low for an 80V device. This ultra-low resistance directly translates to minimized conduction losses, allowing for higher efficiency operation and reducing the need for extensive thermal management solutions.

Complementing its low conduction loss is its superior switching performance. The low gate charge ensures rapid switching transitions, which is critical for high-frequency operation. This capability enables designers to increase the switching frequency of their power supplies, leading to the use of smaller passive components like inductors and capacitors. The result is a significant increase in overall power density, allowing for more compact and lighter end-products without sacrificing performance.

Housed in a robust SuperSO8 package, the BSG0811NDATMA1 offers an excellent power-to-size ratio. This package is renowned for its low parasitic inductance and superior thermal characteristics, which further enhance switching performance and reliability under strenuous conditions. Furthermore, the MOSFET features a high avalanche ruggedness and is qualified according to the highest automotive standards, making it a dependable choice not only for industrial applications but also for demanding automotive environments such as electric power steering, braking systems, and 48V board net platforms.

ICGOODFIND: The Infineon BSG0811NDATMA1 is a top-tier 80V power MOSFET that excels in delivering high efficiency, power density, and robustness. Its optimized performance characteristics make it an ideal semiconductor solution for engineers pushing the boundaries in advanced power conversion and motor control applications.

Keywords: OptiMOS, Low RDS(on), High Switching Frequency, Power Density, SuperSO8.