Optimizing Power Conversion Efficiency with the Infineon BSC117N08NS5 OptiMOS™ 5 Power MOSFET

In the relentless pursuit of higher efficiency and power density in modern electronic systems, the choice of switching device is paramount. The Infineon BSC117N08NS5, a member of the OptiMOS™ 5 80 V power MOSFET family, stands out as a key enabler for designers aiming to push the boundaries of performance in applications such as server and telecom SMPS, motor drives, and synchronous rectification.

The cornerstone of its performance is an exceptionally low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance of just 1.17 mΩ and an ultra-low gate charge (Q G), this device achieves a remarkable balance. The minimized R DS(on) ensures that conduction losses are drastically reduced during the on-state, directly translating to lower power dissipation and higher efficiency, especially under high-load conditions. Concurrently, the ultra-low gate charge (Q G) significantly diminishes switching losses. This allows for faster switching frequencies without a punitive efficiency penalty, enabling designers to use smaller passive components like inductors and capacitors, thereby increasing overall power density.

Furthermore, the BSC117N08NS5 is engineered for robustness and reliability. Its high intrinsic body diode robustness (dv/dt capability) ensures reliable operation during hard commutation events, a critical factor in half-bridge and full-bridge topologies. The combination of low electrical losses and superior switching performance leads to cooler operating temperatures, which enhances system longevity and reduces the demands on thermal management solutions.

Integrating this MOSFET into a design is straightforward due to its standard PG-TO263-3 (D2PAK) package, offering a proven footprint and excellent power dissipation capabilities. By leveraging the attributes of the OptiMOS™ 5 technology, power conversion systems can achieve peak efficiencies exceeding 98%, setting a new benchmark for performance.

ICGOODFIND: The Infineon BSC117N08NS5 OptiMOS™ 5 is a superior component that directly addresses the core challenges of modern power design. Its optimized blend of the lowest possible R DS(on) and Q G delivers a decisive advantage in minimizing both conduction and switching losses. For any engineer focused on maximizing efficiency, power density, and reliability in high-performance applications, this MOSFET is an indispensable solution.

Keywords: Power Efficiency, Low R DS(on), Ultra-Low Gate Charge, OptiMOS™ 5, Switching Performance.