Infineon IPB017N10N5LF OptiMOS 5 Power MOSFET: Datasheet, Application Circuit, and Features

The Infineon IPB017N10N5LF is a state-of-the-art N-channel power MOSFET from the OptiMOS™ 5 technology family, representing a significant leap forward in power efficiency and performance for a wide range of applications. This 100 V device is engineered to deliver best-in-class efficiency in both hard- and soft-switching topologies, making it an ideal choice for modern power conversion systems.

Key Features and Benefits

The standout characteristic of the IPB017N10N5LF is its exceptionally low figure-of-merit (FOM), achieved by optimizing the R_DS(on) Q_g product. With a maximum on-state resistance of just 1.7 mΩ at 10 V V_GS, it minimizes conduction losses. Furthermore, its low gate charge (Q_g) and low reverse recovery charge (Q_rr) significantly reduce switching losses, which is crucial for high-frequency operation. This combination allows designers to create smaller, more efficient, and cooler-running power supplies.

The device is housed in an TO-Leadless (TOLL) package, which offers a compact footprint and superior thermal performance. The package's low-profile design and exposed cooling pad enable excellent power dissipation, facilitating higher power density in space-constrained applications like server and telecom power supplies.

Application Circuit: Synchronous Rectification in SMPS

A primary application for the IPB017N10N5LF is in the secondary-side synchronous rectification (SR) of Switch-Mode Power Supplies (SMPS). In a typical synchronous buck converter circuit, this MOSFET is used as the low-side switch. Its ultra-low R_DS(on) is critical here, as it directly replaces a traditional diode to minimize the voltage drop and associated power loss during the freewheeling phase. This drastically improves the overall efficiency of the power supply unit (PSU). Designers must ensure a proper gate driving circuit, often utilizing a dedicated SR controller IC to precisely time the switching and prevent cross-conduction.

Datasheet Overview

The datasheet for the IPB017N10N5LF provides all essential information for design-in. Key specifications include:

Drain-Source Voltage (V_DS): 100 V

Continuous Drain Current (I_D): 180 A at 25°C

R_DS(on) (max): 1.7 mΩ at V_GS = 10 V

Gate Threshold Voltage (V_GS(th)): Typical 3.6 V

Total Gate Charge (Q_g): Typical 116 nC

Avalanche Energy (E_AS): 1.5 J

The document also contains detailed graphs on switching characteristics, safe operating area (SOA), and thermal impedance, which are vital for robust and reliable system design.

ICGOODFIND

The Infineon IPB017N10N5LF OptiMOS 5 MOSFET sets a new benchmark for power switching devices, offering an unparalleled blend of ultra-low resistance, fast switching speed, and superior thermal performance in a compact package. It is an optimal solution for engineers aiming to push the boundaries of efficiency and power density in applications such as server/telecom PSUs, OR-ing and hot-swap circuits, and motor drives.

Keywords:

1. Power Efficiency

2. Low R_DS(on)

3. Synchronous Rectification

4. OptiMOS 5 Technology

5. TOLL Package