Infineon IR2183STRPBF High and Low Side Driver IC Datasheet and Application Circuit Design Guide
The Infineon IR2183STRPBF is a high-performance, high-voltage power MOSFET and IGBT driver specifically engineered to control both high-side and low-side switches in half-bridge and full-bridge configurations. This driver IC integrates critical functions into a single package, simplifying design and enhancing reliability in motor drives, switch-mode power supplies (SMPS), and other power conversion applications.
A primary strength of the IR2183 lies in its robust level-shifting circuitry for the high-side channel. This allows the high-side driver to operate effectively with bootstrap circuitry, which is the most simple and cost-effective method for generating the required floating supply (VBS) for the high-side N-channel MOSFET. The device features a typical operational voltage of up to 600V, making it suitable for a wide range of high-power circuits.
Key specifications from its datasheet include a source/sink current capability of 1.9A / 2.3A, enabling fast switching of power devices and minimizing switching losses. It incorporates dead time control to prevent shoot-through currents, a catastrophic condition where both high-side and low-side switches conduct simultaneously. Furthermore, it offers undervoltage lockout (UVLO) protection for both channels, ensuring the power switches are only driven when the supply voltages are within a safe operating range, thereby protecting the MOSFETs and the driver itself.
Application Circuit Design Guide
The most common application for the IR2183 is driving a half-bridge stage. The design centers around the proper implementation of the bootstrap power supply for the high-side driver.
1. Bootstrap Components (DBS, CBS): The selection of the bootstrap diode (DBS) and capacitor (CBS) is critical.
The bootstrap diode must be a fast-recovery type with a voltage rating exceeding the maximum high-side voltage. It blocks the high voltage from flowing back into the VCC supply.
The bootstrap capacitor (CBS) must be sized to maintain the VBS voltage above the UVLO threshold during the high-side switch's on-time. A value between 0.1µF and 1µF is typical, and it must be a low-ESR ceramic capacitor placed very close to the VB and VS pins.
2. Gate Resistors (RG): Series gate resistors are essential for controlling the rise and fall times of the MOSFETs' switching transitions. They help dampen ringing and overshoot caused by parasitic inductances in the gate drive loop. Values typically range from a few ohms to tens of ohms. A smaller resistor speeds up switching but increases ringing, while a larger resistor reduces ringing at the cost of higher switching losses.
3. Layout Considerations: Minimizing parasitic inductance in the high-current loop (power path) and the gate drive loop is paramount for stable operation and reducing voltage spikes. This involves:
Using short, wide PCB traces.
Placing the driver IC close to the power MOSFETs.
Using a solid ground plane.
Employing decoupling capacitors (e.g., 1µF ceramic) on the VCC pin, placed as close as possible to the IC.
ICGOODFIND: The Infineon IR2183STRPBF is a quintessential half-bridge driver that balances performance, integration, and cost-effectiveness. Its built-in protections and high noise immunity make it a reliable choice for designers. Success hinges on meticulous attention to the bootstrap circuit design and high-frequency PCB layout practices to unleash its full potential in demanding power applications.
Keywords:
1. Half-Bridge Driver
2. Bootstrap Circuitry
3. Dead Time Control
4. Undervoltage Lockout (UVLO)
5. Gate Drive Resistor
