Infineon BSZ031NE2LS5: 30 V Single N-Channel MOSFET with OptiMOS 5 Technology

The Infineon BSZ031NE2LS5 represents a significant advancement in power semiconductor technology, leveraging the innovative OptiMOS™ 5 technology to deliver exceptional performance in a compact package. Designed for a wide range of applications, including synchronous rectification in DC-DC converters, motor control, and load switching in consumer electronics, this 30 V N-Channel MOSFET sets a new benchmark for efficiency and power density.

One of the most notable features of the BSZ031NE2LS5 is its extremely low on-state resistance (RDS(on)), which is as low as 1.8 mΩ at 10 V. This minimal resistance translates to reduced conduction losses, enabling higher efficiency and lower heat generation in power systems. The device is housed in an advanced PG-TSDSON-8 (SuperSO8) package, which offers an excellent thermal performance-to-footprint ratio. This makes it particularly suitable for space-constrained applications where both high current handling and effective heat dissipation are critical.

The MOSFET's optimized gate charge (Qg) ensures fast switching capabilities, minimizing switching losses and allowing for higher frequency operation. This is essential for improving the performance of switch-mode power supplies (SMPS) and other high-frequency circuits. Additionally, the device boasts a high maximum continuous drain current (ID) of 100 A, providing robust performance in demanding environments.

With its enhanced reliability and durability, the BSZ031NE2LS5 is built to withstand rigorous operating conditions, making it a preferred choice for automotive, industrial, and computing applications. Its lead-free and halogen-free construction also aligns with modern environmental standards.

ICGOOODFIND: The Infineon BSZ031NE2LS5 MOSFET, with its state-of-the-art OptiMOS 5 technology, offers an optimal blend of low RDS(on), high current capability, and superior thermal performance, making it an ideal solution for high-efficiency power management applications.

Keywords: OptiMOS 5 technology, Low RDS(on), Synchronous rectification, High current capability, Thermal performance.