Infineon IRF7465TRPBF: High-Performance Dual N-Channel MOSFET for Power Management Applications
In the realm of modern electronics, efficient power management is a critical determinant of system performance, thermal behavior, and overall reliability. The Infineon IRF7465TRPBF stands out as a premier solution, engineered to meet the rigorous demands of contemporary power conversion and control applications. This dual N-channel MOSFET, housed in a space-saving PQFN 3.3x3.3mm package, integrates two advanced transistors to provide designers with a compact, high-efficiency component for a wide array of circuits.
A key strength of the IRF7465TRPBF lies in its exceptionally low on-state resistance (RDS(on)) of just 7.3 mΩ (max) per channel at VGS = 10 V. This minimal resistance is paramount for minimizing conduction losses, which directly translates to higher efficiency, reduced heat generation, and the potential for cooler operation. This characteristic makes it an ideal choice for high-current switching applications such as synchronous rectification in DC-DC converters, power OR-ing, and motor control circuits.
Furthermore, the device is optimized for high-frequency switching operations. Its superior switching performance, characterized by low gate charge (QG) and low figure-of-merit (FOM RDS(on) QG), ensures that transitions between on and off states are both rapid and clean. This capability is essential for increasing the power density of switch-mode power supplies (SMPS), allowing for the use of smaller passive components like inductors and capacitors, thereby reducing the overall system size and cost.
The advanced OptiMOS™ technology from Infineon underpins the performance of this MOSFET. This technology provides a robust combination of low RDS(on), high breakdown voltage (30 V), and excellent thermal characteristics. The dual-channel design in a single package not only saves valuable PCB real estate but also improves system reliability by ensuring matched electrical characteristics and thermal coupling between the two transistors.
Designed with robustness in mind, the IRF7465TRPBF offers enhanced body diode robustness, which is crucial for handling reverse recovery events in synchronous buck converters. Its lead-free and RoHS-compliant package features an exposed thermal pad that significantly improves heat dissipation, enabling higher power handling capability in a minimal footprint.
ICGOODFIND: The Infineon IRF7465TRPBF is a top-tier dual N-channel MOSFET that excels in power management tasks by delivering an outstanding blend of ultra-low RDS(on), superior switching speed, and exceptional thermal performance in a miniature package. It is an indispensable component for designers aiming to push the boundaries of efficiency and power density in modern electronic systems.
Keywords: Dual N-Channel MOSFET, Low RDS(on), High-Frequency Switching, Power Management, OptiMOS™ Technology.
